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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL 1mA Mounting torque Terminal connection torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
IXFN44N100P
VDSS ID25
RDS(on) trr
= =
1000V 37A 220m 300ns
Maximum Ratings 1000 1000 30 40 37 110 22 2 20 890 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D G = Gate S = Source D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Features International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
t = 1min t = 1s
Advantages Easy to mount Space savings High power density Applications 3.5 6.5 200 TJ = 125C V nA Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 22A, Note 1
Characteristic Values Min. Typ. Max. 1000 V
50 A 3 mA 220 m
(c) 2008 IXYS CORPORATION, All rights reserved
DS99879A(4/08)
IXFN44N100P
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs RGi Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 22A Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 22A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 22A, Note 1 Gate input resistance Characteristic Values Min. Typ. Max. 20 35 1.70 19 1060 41 60 68 90 54 305 104 125 0.14 S nF pF pF ns ns ns ns nC nC nC C/W C/W SOT-227B Outline
Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 22A, -di/dt = 100A/s VR = 100V
Characteristic Values Min. Typ. Max. 44 176 1.5 A A V
300 ns 2.5 17 C A
Note 1: Pulse test, t 300s; duty cycle, d 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFN44N100P
Fig. 1. Output Characteristics @ 25C
45 40 35 VGS = 10V 9V 90 80 70 60 VGS = 10V 9V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
30 25 20 15 10 7V 5 0 0 1 2 3 4 5 6 7 8 9 10 11
ID - Amperes
8V
50 40 30 20 10 0 0 5 10 15 20 25 30 7V 8V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
45 40 35 VGS = 10V 8V 3.0 2.8 2.6 2.4
Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
ID - Amperes
30 25 20 7V 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 22 24 6V
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 I D = 44A I D = 22A
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current
2.6 2.4 2.2 VGS = 10V TJ = 125C
35 30 40
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
2.0
ID - Amperes
90
25 20 15 10 5 0
1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50 60 70 80 TJ = 25C
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXFN44N100P
Fig. 7. Input Admittance
50 45 40 60 55 50 45 TJ = 125C 25C - 40C 25C 125C TJ = - 40C
Fig. 8. Transconductance
g f s - Siemens
35
ID - Amperes
40 35 30 25 20 15
30 25 20 15 10 5 0 5 5.5 6
10 5 0 6.5 7 7.5 8 8.5 9 0 5 10 15 20 25 30 35 40 45 50
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
130 120 110 100 90 12 16 14 VDS = 500V I D = 22A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
80 70 60 50 40 30 20 10 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 TJ = 25C TJ = 125C
VGS - Volts
10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 450
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 f = 1 MHz
1.000
Fig. 12. Maximum Transient Thermal Impedance
Capacitance - PicoFarads
10,000
Ciss
1,000 Coss
100
Crss 10 0 5 10 15 20 25 30 35 40
0.001 0.0001 0.001 0.01 0.1 1 10
Z(th)JC - C / W
0.100
0.010
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_44N100P(97)4-01-08-D

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